Highly efficient SWCNT/GaAs van der Waals heterojunction solar cells enhanced by Nafion doping

The atomic-level interface and strong interfacial interaction enable van der Waals (vdW) heterostructures to fabricate innovative photovoltaic devices by combing single-walled carbon nanotubes (SWCNTs) with bulk semiconductors, in which the device performance can be enhanced significantly using outstanding photoelectric property of SWCNTs. Herein, we reported a facile method to fabricate SWCNT/GaAs vdW heterojunction solar cell by transferring p-type (6,5)-enriched SWCNT film onto the n-type GaAs substrate, a power conversion efficiency (PCE) of 7.23 % has been achieved without any other treatment. Furthermore, the PCE value can be enhanced to 11.24 % by introducing Nafion as a highly effective dopant with a short-circuit current density of 24.70 mA/cm2, an open-circuit voltage of 0.64 V and a fill factor of 0.71. Our results reveal that the introduction of Nafion not only induces a stronger and closer contact at the interface between SWCNTs and GaAs, but also shows strong p-doping effect due to the existence of sulfonic acid functional groups. This p-doping effect of Nafion increases the work function of SWCNTs and subsequently enlarges the barrier height at the heterojunction for more efficient carrier separation. In addition, Nafion can also serve as an antireflection and passivation layer, reducing the incident light loss and the carrier recombination rate. These findings suggest that Nafion could be used to improve the performance of SWCNT-based vdW heterojunction devices. [Display omitted] •The PCE of vdW heterojunction solar cell can be improved from 7.23 % to 11.24 % by Nafion doping.•Nafion increases work function of SWCNT, leading to a faster and more efficient charge transfer.•Nafion as antireflection and passivation layer improves light harvesting and reduces carrier recombination.