Structural and vibrational properties of CVD grown few layers MoS2 on catalyst free PAMBE grown GaN nanowires on Si (111) substrates

In the present work, catalyst free GaN nanowires were grown on Si (111) substrates by plasma assisted molecular beam epitaxy followed by chemical vapour deposited few layers MoS2. The morphology of the GaN nanowires and MoS2/GaN were studied using scanning electron microscopy. The vibrational properties of MoS2/GaN nanowires/Si (111) substrates were analysed using Raman spectroscopy. The difference of 24.8 cm−1 between E2g and A1g Raman peaks confirmed few layers of MoS2. High Resolution X-ray diffraction results in accordance with Raman results also indicated the growth of few layers of MoS2 on GaN nanowires grown on Si (111) substrates. As a result MoS2/GaN nanowires heterojunction with their exceptional structural and vibrational properties as studied in the present work can have great potential for future optoelectronic devices. •Catalyst free GaN nanowires were grown on Si (111) substrates by plasma assisted molecular beam epitaxy.•Few layers of 2D MoS2 were deposited on GaN nanowires by chemical vapour deposition.•The grown MoS2/GaN nanowires sample was characterised by SEM, HRXRD and Raman spectroscopy.•MoS2/GaN nanowires heterojunction has a potential for future optoelectronic devices.