Effects of transition metal element doping on the structural and thermoelectric properties of n-type Bi2-xAgxSe3 alloys
In this work, it is demonstrated that a higher electrical conductivity can be obtained when Ag atoms, as a transition metal, replaces Bi atoms in the n-type Bi2-xAgxSe3 system. As a result of differences in the atomic mass and size between Ag and Bi, larger Seebeck coefficient is obtained. The conce...
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Veröffentlicht in: | Journal of alloys and compounds 2021-01, Vol.851, p.156887, Article 156887 |
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Sprache: | eng |
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Zusammenfassung: | In this work, it is demonstrated that a higher electrical conductivity can be obtained when Ag atoms, as a transition metal, replaces Bi atoms in the n-type Bi2-xAgxSe3 system. As a result of differences in the atomic mass and size between Ag and Bi, larger Seebeck coefficient is obtained. The concerned Bi2-xAgxSe3 alloys were prepared by melting in high temperature. Identifications of the microstructure and surface morphology were carried out via X-ray diffraction (XRD) analysis and scanning electron microscope (SEM) attached with the energy dispersive x-ray (EDX) unit. All samples are polycrystalline. Seebeck coefficient, electrical and thermal conductivities were measured over the temperature range 300–473K. Notable enhancement in the electrical conductivity is obtained. The thermoelectric power factor is calculated showing its maximum value at 260 μW/mK2. High electrical conductivity and high Seebeck coefficient of some of the doped alloys resulted in a promising figure of merit (ZT). The largest ZT is calculated at 0.23 at 473K for the Bi1.8Ag0.20Se3 sample.
•Bulk Bi2-xAgxSe3 alloys were synthesized by mono-temperature melting method.•The effects of Ag addition on the transport properties Bi2-xAgxSe3 were studied.•The electrical conductivity is significantly enhanced by Ag addition.•The Ag-doped samples exhibited a higher Seebeck coefficient and a lower thermal conductivity.•The maximum ZT value of 0.23 was obtained at 473 K. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2020.156887 |