Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm

•The electroluminescence at a peak wavelengths up to 2.5 mm from diodes based on single GaInAsBi/AlInAs QWs observed – the longest wavelengths documented as yet for the light emitters from dilute bismide materials.•Temperature coefficient of the peak wavelength of GaInAsBi SQW light emitting diodes is 2–3 times smaller than the corresponding parameters of GaAs and InGaAs based devices.•Prospective approach for the fabrication of Mid-IR emitters by using InP technological platform. Ga0.53In0.47As1−xBix/Al0.48In0.52As single quantum wells were grown by molecular-beam epitaxy on InP substrates with bismuth content as high as 7% in the well layer. The electroluminescence spectra with a peak wavelength as long as 2.5 μm was observed after applying electric bias on p-n diodes fabricated from these epitaxial structures. It has been shown that both the peak wavelength and the emitted light intensity change only slightly when the temperature of the experiment is varied from 10 °C to 60 °C. It was concluded that quaternary bismides grown on InP could be a prospective new technological system for the fabrication of mid-infrared radiation sources.