Tribological behavior of PDC-cutter including cemented carbide and polycrystalline diamond composites produced by HPHT for drilling applications
In this study, the tribological behavior of PDC-cutter including WC particles/Ta-20Nb binder composite as substrate and polycrystalline diamond composite as PCD layer produced by high pressure-high temperature (HPHT) for drilling applications was investigated. To examine the metallurgical behavior,...
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Veröffentlicht in: | International journal of refractory metals & hard materials 2024-09, Vol.123, p.106756, Article 106756 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this study, the tribological behavior of PDC-cutter including WC particles/Ta-20Nb binder composite as substrate and polycrystalline diamond composite as PCD layer produced by high pressure-high temperature (HPHT) for drilling applications was investigated. To examine the metallurgical behavior, phase analysis, hardness of substrate and PCD layer, and tribological behavior, scanning electron microscopy, X-ray diffraction, Vickers microhardness, and wear tests were used, respectively. Due to the HPHT of the manufacturing process, the high hardness of the interfaces, especially for the WC/Ta-20Nb was achieved, which had ∼28% higher hardness than the diamond grits/Ta-20Nb binder. Therefore, no obvious porosity was observed in the interfaces and the composites were completely densified because the particles had good retention strength. The wear results showed that the tribological behavior of PCD layer/granite or marble pairs was directly influenced by the binder content, with samples having a lower binder content showing superior wear performance. Additionally, worn surface investigations demonstrated that adhesive and abrasive wear mechanisms were present in all pairs, with their intensities being strongly correlated with the binder concentration.
•Creating Ta solid solution at the interfaces prevents forming brittle compounds.•Diffusion of W, Ti, Nb and C in Ta creates high hardness of interfaces.•Compensating for lack of strengthening of interstitial C in PCD layer with a higher CTE. |
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ISSN: | 0263-4368 2213-3917 |
DOI: | 10.1016/j.ijrmhm.2024.106756 |