Investigating the influence of Eu-doping on the structural and optical characterization of cadmium oxide thin films
In the present investigation, a low-cost and high-operational sol-gel spin coating technique for preparing undoped and various Europium (Er)-doped CdO films of molar percentages of 1%, 5%, 10%, and 15% were considered. Using X-ray diffraction, the polycrystalline nature reveals two preferred orienta...
Gespeichert in:
Veröffentlicht in: | Optik (Stuttgart) 2023-06, Vol.281, p.170830, Article 170830 |
---|---|
Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In the present investigation, a low-cost and high-operational sol-gel spin coating technique for preparing undoped and various Europium (Er)-doped CdO films of molar percentages of 1%, 5%, 10%, and 15% were considered. Using X-ray diffraction, the polycrystalline nature reveals two preferred orientations of (111) and (200). The mean crystallite size was evaluated and increased from 20.95 to 49.37 nm using the well-known Scherer’s formula by increasing the Eu- dopant content. The atomic force microscopy images indicate a homogeneity of a granular distribution deteriorated with Eu-content. The root means square roughness value was evaluated and increased from 4.1 nm to 284 nm with Eu-doping. High transmission of approximately 80% in the visible region spectrum was recorded. The optical band gaps are increased from 2.2 to 2.46 eV from the undoped and various Eu-content %. A relationship between the Eu- content % for CdO films and the optical parameters was discussed to support the availability of the device for optoelectronic applications.
[Display omitted]
•Films of Eu-doped CdO were produced through a sol-gel spin coating technique.•The effect of Eu-doping on the enhancement of CdO properties was investigated.•The optical constants were computed by the Kramer-Kronig method.•The energy band gap is direct allowed and influenced by Eu- doping.•The results confirm the capability of Eu-CdO for optoelectronic devices. |
---|---|
ISSN: | 0030-4026 1618-1336 |
DOI: | 10.1016/j.ijleo.2023.170830 |