Influence of SnMnO2 window layer on enhancing the performance of CIGSSe thin-film solar cell

In this paper, the thickness and doping concentrations of the double buffer cell-based conventional CIGSSe solar cells are optimized, and alignment of the energy band of the optimized solar cell (ZnMgO/CIGSSe) is carried out, thus obtaining an increase in efficiency from 23.35 % to 27.88 %. Further, a new design is proposed of low cost, low resistivity, minimum absorption coefficient, tunable energy bandgap (3.6–4.44 eV) with tin-doped manganese oxide Sn1−xMnxO2 material (x = 0.5) as a window layer in conventional solar cell design. The thin-film solar cell efficiency has improved from 23.35 % to 29.05 % by aligning the energy bandgap with an optimized thickness and doping concentration. The proposed Sn1−xMnxO2 window layer-based thin-film solar cell is more convenient in instantly absorbing the maximum blue light with reduced recombination loss, increased efficiency and external quantum efficiency. The simulated parameters of the conventional model are compared and validated with the existing conventional solar cells.