Transport properties of the deformed quaternary InGaAsP epitaxied on different substrates

Improving transport phenomena and increasing the absorption of III-V materials is a major research topic. These properties are affected by several factors. Understanding the link between substrate choice and transport properties is essential. In this study, the constraints due to lattice mismatch and its impact on the transport properties of the In1−xGaxAsyP1−y alloy epitaxially grown on different substrates were studied according to the arsenic and indium content. The variation in the transport properties by varying the pressure from 0 to 120 kbar and the temperature from 0 to 500 K has also been studied. The effect of the substrate (InP, GaAs, or ZnSe) on quaternary absorption peaks was also examined.