The effect of Ge content on the structure and properties of low temperature deposited infrared Ge100-xCx films on As40Se60 chalcogenide glass

The effect of Ge content on the structure and properties of low temperature deposited infrared Ge100-xCx films on As40Se60 chalcogenide glass

In this work, amorphous Ge100-xCx films were deposited on As40Se60 chalcogenide glass by radio frequency magnetron co-sputtering (rf MS) with different Ge content. The deposition temperature rise, the structural, mechanical and optical properties of Ge100-xCx films as a function of Ge content was in...

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Veröffentlicht in:Optik (Stuttgart) 2020-12, Vol.224, p.165413, Article 165413
Hauptverfasser: Fu, Kaihu, Jin, Yangli, Shang, Peng, Liu, Yonghua, He, Kun, Xu, Bo, Zhao, Hua, Chen, Wei, Zu, Chengkui
Format: Artikel
Sprache:eng
Schlagworte:
Chalcogenide glass
Ge content
Ge100-xCx film
Infrared protective film
Low temperature
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Zusammenfassung:In this work, amorphous Ge100-xCx films were deposited on As40Se60 chalcogenide glass by radio frequency magnetron co-sputtering (rf MS) with different Ge content. The deposition temperature rise, the structural, mechanical and optical properties of Ge100-xCx films as a function of Ge content was investigated by thermocouple, X-ray photoelectron spectroscopy (XPS), Raman Spectroscopy, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transformed Infrared Spectroscopy, Surface Profiler and Continuous Stiffness Measurement (CSM). The deposition temperature rise of Ge100-xCx films derived from radical ions and neutrals is mild (
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2020.165413