Electronic heat conductivity in a two-temperature state

•Electronic heat conductivity at high electronic temperatures is calculated.•XTANT-3: combined tight-binding and linear response theory for conductivity.•Wide variety of materials studied: 39 metals, 14 semiconductors, semimetal. Heat transport in solids is governed by two fundamental contributions, atomic and electronic. The electronic energy transport in transient excited states is a defining factor in the problem of ultrafast material irradiation. Here, we calculate the electronic heat conductivity at elevated electron temperatures up to 40,000 K. We apply the novel combined method of tight binding formalism to calculate the electron-phonon contribution to the electronic heat conductivity, and the linear response theory (in the single-pole Ritchie-Howie loss function approximation) for its electron-electron counterpart, implemented in the hybrid code XTANT-3. It allows us to evaluate the electronic heat conductivity in a wide range of materials – fcc metals: Al, Ca, Ni, Cu, Sr, Y, Zr, Rh, Pd, Ag, Ir, Pt, Au, and Pb; hcp metals: Mg, Sc, Ti, Co, Zn, Tc, Ru, Cd, Hf, Re, and Os; bcc metals: V, Cr, Fe, Nb, Mo, Ba, Ta, and W; other metals: Sn, Ga, In, Mn, Te, and Se; semimetal graphite; semiconductors – group IV: Si, Ge, and SiC; group III-V: AlAs, AlP, GaP, GaAs, and GaSb; oxides: ZnO, TiO2, and Cu2O; and others: PbI2, ZnS, and B4C.