Exploring the effect of BN doping in two-dimensional fullerene networks through first principle simulations

[Display omitted] The doping of lighter non-metals like boron and nitrogen into fullerene C60 represents a promising advancement in the field of nanoelectronic devices. These doped two-dimensional (2D) materials offer improved stability and enhanced adsorption characteristics compared to pure form. Notably, It displays semiconducting behaviour, resulting in higher conductivity and carrier mobility. This study investigates the structural, electronic, optical, and conductivity/carrier transport properties of 2D polymer sheets made of fullerene, both with and without boron and nitrogen doping. We employ density functional theory (DFT) with PBE and HSE functionals, considering the inclusion of van der Waals (vdW) interactions. The research findings indicate that the 2D sheets of C60,C58B1N1, and C54B3N3 exhibit band gaps of approximately 0.97eV(1.51eV),1.08eV(1.65eV), and 1.05eV(1.56eV), respectively, as obtained from PBE (HSE) calculations. Moreover, according to the deformation potential theory, C58B1N1 exhibit ultra-high conductivity (1014Ω-1cm-1s-1 at room temperature). These sheets display cohesive energies of −8.76, −8.72, and -8.67eV, respectively, indicating their stability. These results are promising and underscore the significance of a single pair of BN dopants in fullerene monolayers for advancing next-generation 2D nano-electronic applications.