Study on effect of surface engineering by In doped CeCu2O4 for enhanced super capacitive properties as energy storage solution

This research study focuses on the utilization of indium-doped cerium copper oxide as electrode materials to augment super capacitive properties. Hydrothermal method was employed to successfully synthesize both pristine CeCu2O4 and CeCu2O4 doped with varying concentrations of indium (1 %, 3 %, and 5 %). Indium doping induced alterations in the crystal structure and modified the morphology of CeCu2O4 flakes, that lead to the development of a network-like structure. Notably, the electrode material comprising 3 % indium-doped CeCu2O4 exhibited a significantly increased specific surface area of 151.2 (m2/g), which provided an abundance of enhanced active sites on its surface. Electrochemical experimental results revealed that the 3 % indium-doped CeCu2O4 electrode material demonstrated greater electrochemical functioning. It exhibited a specific capacitance (Cs) of 1082 F/g and 740 at a current density of 1 A/g and 1.5 A/g in 3 and 2-electrode configurations, respectively. Calculated from CV analysis resulted in Cs values of 374 F/g and 313 F/g at a scan rate of 10 mV/s in 3 and 2-electrode configurations, respectively. Furthermore, it displayed 33.3 Wh/kg energy density (Ed) and maintained a retention rate of 74.7 % after 50 h of testing, as well as exhibiting a lower charge transfer resistance (Rct) of 12.02 Ω and 23.2 Ω in 3 and 2-electrode configuration. Due to its outstanding specific capacitance, prolonged durability, and reduced resistance, the 3 % indium-doped CeCu2O4 electrode material emerges as a suitable contender for advanced supercapacitor uses for the next generation. [Display omitted] •In doping was optimized in CeCu2O4, 1%, 3% and 5%.•Csp of 1082 and 740 F/g observed in 3 and 2 electrode configurations.•3% In–CeCu2O4 exhibited Ed of 33 Wh/kg and Pd of 235 W/kg.•3% In–CeCu2O4 had Rct of 12.02 and 23.2 Ω in 3 & 2 electrode systems, respectively.