A new X-ray beam induced current setup, coupled with X-ray diffraction imaging, for diamonds and semiconductors characterization by synchrotron techniques at ESRF

We developed a Time-Of-Flight (TOF) X-Ray Beam Induced Current (XBIC) setup on the BM05 beamline of the ESRF aiming at characterizing the electronic properties of the commercially available semiconductors. By recording 2-dimensionnal current maps, we are able to evaluate the homogeneity of response of the semiconductor to the X-ray beam excitation. Time resolution studies can be performed thanks to the synchronization of the response to the individual X-rays bunches. In addition, the availability of Bragg diffraction imaging on the same beamline provides the advantage of coupled measurements using both techniques. This paper presents the results obtained from several diamonds during the commissioning of the XBIC setup. A comparison with the results obtained with Bragg diffraction imaging and fluorescence maps is also shown and demonstrates that these techniques are complementary. [Display omitted] •XBIC measurements are performed on diamonds of different type.•Correlations between structural defects and electronic properties are shown.•Irradiated induced defects are characterized thanks to XBIC measurements.