CVD growth of the centimeter-scale continuous 2D MoS2 film by modulating the release of Mo vapor with adjusting the particle size of Al2O3 microsphere
[Display omitted] •Al2O3 microsphere powder which uniformly covered on the MoO3 precursor can be regarded as a ‘physical filter’ for the release of Mo precursor.•The partical size of Al2O3 microsphere is a key parameter of controlling the release amount of Mo vapor in this CVD system.•When the mean...
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Veröffentlicht in: | Chemical physics letters 2023-02, Vol.813, p.140292, Article 140292 |
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Sprache: | eng |
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•Al2O3 microsphere powder which uniformly covered on the MoO3 precursor can be regarded as a ‘physical filter’ for the release of Mo precursor.•The partical size of Al2O3 microsphere is a key parameter of controlling the release amount of Mo vapor in this CVD system.•When the mean partical size of Al2O3 microsphere is 100 nm, a large-area continuous monolayer MoS2 film can be obtained at 650 ℃.
We report a convenient chemical vapor deposition (CVD) strategy of two-dimensional (2D) MoS2: the release of Mo vapor is modulated by adjusting the particle size of Al2O3 microsphere powder which uniformly cover on MoO3 precursor, so as to achieve controllable synthesis of MoS2. In this CVD system, Al2O3 is inactive, and the particle size of Al2O3 microsphere is the key parameter of affecting the release amount of Mo vapor. When the particle size of Al2O3 microsphere is 100 nm, a centimeter-scale continuous monolayer MoS2 can be obtained. This work provides a feasible approach to controllably synthesize 2D transition metal dichalcogenides (TMDCs). |
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ISSN: | 0009-2614 1873-4448 |
DOI: | 10.1016/j.cplett.2022.140292 |