High temperature electrical breakdown and energy storage performance improved by hindering molecular motion in polyetherimide nanocomposites

Polyetherimide (PEI) is widely used as a material for high temperature and high power energy storage capacitors in new energy vehicles and other fields. However, as the temperature increases, the electrical conductivity increases and the breakdown strength decreases, which greatly reduces the energy...

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Veröffentlicht in:Composites science and technology 2024-07, Vol.254, p.110656, Article 110656
Hauptverfasser: Yang, Lingyu, Min, Daomin, Gao, Ziwei, Yang, Liuqing, Zhu, Yuanwei, Liu, Wenfeng
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Sprache:eng
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Zusammenfassung:Polyetherimide (PEI) is widely used as a material for high temperature and high power energy storage capacitors in new energy vehicles and other fields. However, as the temperature increases, the electrical conductivity increases and the breakdown strength decreases, which greatly reduces the energy storage density of the capacitor and limits the application range. In order to clarify the influence mechanism of high temperature on the breakdown and energy storage performance of dielectrics, this paper established a charge capture and molecular displacement (CTMD) breakdown model based on the expansion motion of molecular segments to study the charge transport and molecular chain motion process of PEI nanocomposites (PNCs) at high temperature. The results show that at 100 °C, compared with pure PEI, the internal maximum molecular displacement of PEI PNCs with appropriate doping content (3 wt%) is reduced by 28.79 %, and the breakdown strength is increased by 11.20 %. Appropriate nano-doping can effectively increase the movement difficulty of molecular chains and reduce the activation volume that provides energy for charge transport. Thus, charge transport is inhibited, current density is reduced, and Joule heat accumulation is avoided. Finally, the high temperature breakdown and energy storage performance are improved. [Display omitted]
ISSN:0266-3538
1879-1050
DOI:10.1016/j.compscitech.2024.110656