Evidence for bandwidth-control metal-insulator transition in Ti3O5

[Display omitted] The phase transition between lambda-Ti3O5 and beta-Ti3O5 can be driven by light irradiation, pressure, heat or electrical current, so it has broad application prospects in many fields. In this paper, the electronic and atomic structures of lambda-Ti3O5 and beta-Ti3O5 are calculated...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Computational materials science 2020-02, Vol.173, p.109435, Article 109435
Hauptverfasser: Fu, Xian-Kai, Yang, Bo, Chen, Wan-Qi, Jiang, Zhong-Sheng, Li, Zong-Bin, Yan, Hai-Le, Zhao, Xiang, Zuo, Liang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:[Display omitted] The phase transition between lambda-Ti3O5 and beta-Ti3O5 can be driven by light irradiation, pressure, heat or electrical current, so it has broad application prospects in many fields. In this paper, the electronic and atomic structures of lambda-Ti3O5 and beta-Ti3O5 are calculated using first principle method, and the metal-insulator phase transition between lambda-Ti3O5 and beta-Ti3O5 is investigated. The study found that beta-Ti3O5 is Mott-Hubbard insulator. Through the analysis of the arrangement of atoms of lambda-Ti3O5 and beta-Ti3O5 crystal structures, we found that the metal-insulator transition between lambda-Ti3O5 and beta-Ti3O5 conforms to the bandwidth-controlled transition.
ISSN:0927-0256
1879-0801
DOI:10.1016/j.commatsci.2019.109435