Carbides and Nitrides: Advanced materials for engineering the electrochemistry of silicon anodes for high energy density Lithium-Ion battery
[Display omitted] •SiC and Si3N4 are inert for electrochemical insertion of Li+-ion.•SiC and Si3N4 produce Li3C or Li3N matrix and active Si through conversion reaction.•SiC2, SiC3, SiC5 and SiC7 siligraphenes can accept more Li+-ion than the graphite.•Nitrogen content in Si3N4 affect the specific c...
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Veröffentlicht in: | Chemical engineering journal (Lausanne, Switzerland : 1996) Switzerland : 1996), 2024-07, Vol.491, p.151921, Article 151921 |
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Sprache: | eng |
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•SiC and Si3N4 are inert for electrochemical insertion of Li+-ion.•SiC and Si3N4 produce Li3C or Li3N matrix and active Si through conversion reaction.•SiC2, SiC3, SiC5 and SiC7 siligraphenes can accept more Li+-ion than the graphite.•Nitrogen content in Si3N4 affect the specific capacity and battery stability.•Composites of Si with other metal carbides does not follow conversion mechanism.
Next generation lithium-ion batteries (LIBs) are in need of high energy density electrode materials to advance the world with electric vehicles and thereby to give a pollution-free atmosphere for future generation. In intense search for finding high energy material to the currently dominating graphite, Si was proposed as a worth candidate since its successful career in photovoltaic technology. The high theoretical capacity (4200 mAh/g), superabundant nature and environmental friendliness led to study as anode in LIB but Si was unable to compete with graphite by means of stability. The volume expansion (400 %) and pulverization causes continuous formation of new solid electrolyte interface which depletes the active Si. Hence, several strategies have been pursued to overcome the capacity fading, in which, carbide and nitride differ from others that it follows conversion mechanism in protecting active Si from the electrolyte invasion and perform as buffer matrix to go through the volume expansion of Si. This review presents the evolution and recent advancements of carbide and nitrides towards Si anode for LIB. Also, discusses the opportunities and directions for advancing the LIB technology. |
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ISSN: | 1385-8947 1873-3212 |
DOI: | 10.1016/j.cej.2024.151921 |