Molecularly understanding and regulating carrier injection behavior of ETL/perovskite towards high performance PeLEDs
•The electron injection of ETL/perovskite of PeLEDs at molecular level is studied.•The molecular planarity bridging effects are discovered.•Superior molecular planarity of ETL enhances electron transport ability of ETL.•Superior molecular planarity of ETL improves carrier injection of ETL/perovskite...
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Veröffentlicht in: | Chemical engineering journal (Lausanne, Switzerland : 1996) Switzerland : 1996), 2023-01, Vol.456, p.141077, Article 141077 |
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Sprache: | eng |
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Zusammenfassung: | •The electron injection of ETL/perovskite of PeLEDs at molecular level is studied.•The molecular planarity bridging effects are discovered.•Superior molecular planarity of ETL enhances electron transport ability of ETL.•Superior molecular planarity of ETL improves carrier injection of ETL/perovskite.•Superior molecular planarity of ETL leads to superior performances of PeLEDs.
Effectively balancing carrier injection of perovskite LEDs (PeLEDs) for next-generation display and illumination urgently needs for molecularly understanding carrier injection behavior of electron transport layer (ETL)/perovskite toward further developing high performance PeLEDs. Here, we molecularly reveal the electron injection behaviors of PeLEDs by theoretically-experimentally decoupling the electron transport of ETLs and electron injection of TmPyPB/perovskite and TPBi/perovskite. Resulted, the better molecular planarity bridging effect (MPBE) of TmPyPB than TPBi can effectively increase electronic-coupling for the improved electron transport ability and significantly decrease injection barrier for the enhanced electron injection capability, intrinsically leading to a more balanced carrier injection and a less electron accumulation of PeLEDs. Compared to TPBi-based PeLEDs, the TmPyPB-based PeLEDs present the obviously-increased average EQE, current efficiency, power efficiency and luminance by 44 %, 63 %, 43 % and 100 %, respectively. Meanwhile, this PeLED shows a higher voltage tolerance characteristic of 7.5 V than that of TPBi-based PeLEDs (6.25 V). Therefore, this work may provide a fundamental insight into carrier injection behavior of PeLEDs for effectively-regulating its carrier injection balance and further for its greatly-facilitated commercialization. |
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ISSN: | 1385-8947 1873-3212 |
DOI: | 10.1016/j.cej.2022.141077 |