Near-infrared non-fused electron acceptors for efficient organic photovoltaics
Developing narrow-bandgap organic semiconductors is important to facilitate the advancement of organic photovoltaics (OPVs). Herein, two near-infrared non-fused ring acceptors (NIR NFRAs), PTBFTT-F and PTBFTT-Cl have been developed with A-πA-πD-D-πD-πA-A non-fused structures. It is revealed that the...
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Veröffentlicht in: | Chinese chemical letters 2024-04, Vol.35 (4), p.109099, Article 109099 |
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Sprache: | eng |
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Zusammenfassung: | Developing narrow-bandgap organic semiconductors is important to facilitate the advancement of organic photovoltaics (OPVs). Herein, two near-infrared non-fused ring acceptors (NIR NFRAs), PTBFTT-F and PTBFTT-Cl have been developed with A-πA-πD-D-πD-πA-A non-fused structures. It is revealed that the introduction of electron deficient π-bridge (πA) and multiple intramolecular noncovalent interactions effectively retained the structural planarity and intramolecular charge transfer of NFRAs, extending strong NIR photon absorption up to 950 nm. Further, the chlorinated acceptor, with the enlarged π-surface compared to the fluorinated counterpart, promoted not only molecular stacking in solid, but also the desirable photochemical stability in ambient, which are helpful to thereby improve the exciton and charge dynamics for the corresponding OPVs. Overall, this work provides valuable insights into the design of NIR organic semiconductors.
Two near-infrared non-fused ring acceptors, PTBFTT-F and PTBFTT-Cl were developed with A-πA-πD-d-πD-πA-A structures, wherein the introduction of electron deficient π-bridge and multiple intramolecular noncovalent interactions effectively reinforced the planar structures with strong NIR photon absorption up to 950 nm. [Display omitted] |
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ISSN: | 1001-8417 1878-5964 |
DOI: | 10.1016/j.cclet.2023.109099 |