Unveiling interface engineering dynamics between Ti and Ga2O3 nanowire

[Display omitted] •Ga2O3 NW devices with Ti/Au electrodes were found to be ohmic contacts after annealing.•Ga3Ti2 intermetallic compound was found at the interface, which promotes the ohmic contacts.•Structural evolutions and anisotropic diffusion behavior of Ga3Ti2 were studied. In this study, we investigate the interfacial reactions between Ga2O3 nanowires (NWs) and Ti contacts during annealing processes through in-situ transmission electron microscopy (TEM) observations. A thin Ga3Ti2 intermetallic compound was observed to form at the Ti/Ga2O3 interface, coinciding with a transition in the NW device’s contact behavior from Schottky to ohmic upon annealing at 470 °C. Utilizing in-situ TEM, we monitored the evolution of the Ga3Ti2 layer, revealing Ga atoms as the primary diffusing species within the Ga2O3 NW, evidenced by asymmetric diffusion at the interface. Ga3Ti2 intermetallic compound effectively reducing the energy barrier between Ga2O3 NW and Ti electrode, contributing to linear electrical transport characteristics. This investigation underscores the significance of interface engineering and offers valuable insights for future electronic applications utilizing Ga2O3 NWs.