In-situ electric field-tailored exchange bias in the manganite/ferroelectric multiferroic heterostructures

[Display omitted] •A large exchange bias ∼198 Oe is found in the LCMO/PZT multiferroic device.•The ferroelectric domain and exchange bias can be tuned by lattice strain.•Tailoring the phase separation of the ferromagnetic LCMO layer allows for precise electric field control of the exchange bias. The...

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Veröffentlicht in:Applied surface science 2024-06, Vol.659, p.159888, Article 159888
Hauptverfasser: He, Bin, Guo, Jinrui, Han, Yue, Wang, Qixiang, Han, Jiale, Wang, Jiaqing, Yan, Shishen, Lü, Weiming
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Sprache:eng
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Zusammenfassung:[Display omitted] •A large exchange bias ∼198 Oe is found in the LCMO/PZT multiferroic device.•The ferroelectric domain and exchange bias can be tuned by lattice strain.•Tailoring the phase separation of the ferromagnetic LCMO layer allows for precise electric field control of the exchange bias. The application of electric field-induced magnetic structure changes has significantly advanced nonvolatile data storage with ultralow energy consumption, as well as spintronics and quantum computing processes. In artificial perovskite oxide multiferroic structures composed of ferromagnetic and ferroelectric layers, the evolution of magnetic phases and ferroelectric domains often contribute to the magnetoelectric coupling. To fully understand the mechanisms behind electric field-induced changes in magnetic structures and enable the miniaturization of magnetoelectric devices, it is crucial to achieve local ferroelectric domain-triggered ferromagnetic evolution. In this study, we have fabricated La0.7Ca0.3MnO3/Pb(Zr0.52Ti0.48)O3 (LCMO/PZT) heterostructures, where the magnetic phase separation of LCMO and the ferroelectric domain of PZT can be modulated by substrates and piezoelectric force microscopy, respectively. Our experiments demonstrate that by switching the polarization states of PZT, we can observe electric field control of the magnetic exchange bias effect through changes in the phase separation of the LCMO layer. These results contribute to the development of magnetoelectric devices with enhanced properties and offer valuable insights for future design strategies.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2024.159888