Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition

[Display omitted] •Quality non-polar GaN films (which itself is believed to be challenging) are deposited on the polar substrates using PLD route.•These non-polar GaN films exposed to 60Co Gamma radiations varying dose values from 40 kGy to maximum value of 260 kGy under atmospheric conditions.•The critical investigations reported on the non-polar GaN films for the first time, clearly demonstrate the resistive nature of the films against expose to energetic gamma rays is highly impressive.•The result reported herewith demonstrate use of non-polar GaN films can be one of the options to fabricate next generation of gamma ray detectors. The GaN films/layers exposed to γ-radiations is known to harvest defects and vacancies in the crystals producing donor, acceptor and recombination centers within the bandgap. Therefore it is important to investigate and study the γ- ray irradiation effects on various physical and chemical properties of a material before any optoelectronic and/or electronic devices are being fabricated. To avoid Stark effect which is observed in most of the optoelectronic devices fabricated using GaN films grew along polar face, use of non-polar GaN films is suggested by researchers. To address such issues the article reports the investigations of physical and chemical properties of non-polar GaN films grown on polar substrate using pulsed laser deposition, which were exposed to the 60Co gamma rays varying dose values. Resistive nature against the impairment of the films caused by γ-rays observed herewith is highly encouraging, suggesting the use of non-polar GaN films as radiations harden material suitable for fabricating new generation γ-ray detectors. To our knowledge very limited information is available that report such investigations.