Photoresponse of large-area atomically thin β-Ga2O3 and GaN materials via liquid metal print synthesized

[Display omitted] •The primary innovation lies in its comprehensive exploration of the structure and photocurrent characteristics of β-Ga2O3 and GaN two-dimensional materials synthesized via liquid metals.•The focus is on quantitative discussions regarding β-Ga2O3 and GaN photocurrent detectors.•Moreover, the investigation delves into distinctions in photoresponse and recovery times, employing concepts like energy bandgap (Eg) and crystallinity structure. This study uses liquid gallium metal to synthesize two-dimensional gallium oxide and gallium nitride ultra-thin layers. Addressing the challenges of conventional methods, this approach combines liquid metal properties with Polydimethylsiloxane (PDMS) transfer printing, resulting in large-area, highly clean, and low-residue amorphous Ga-based wide bandgap semiconductors. Transformation of amorphous Ga2O3 into crystallized β-Ga2O3 and GaN is achieved through annealing and ammoniation. Comprehensive characterizations confirm successful changes. Photodetector devices are fabricated and characterized, revealing Ga2O3 photosensitive nature with distinct performance metrics. GaN, while exhibiting lower photoresponse, displays rapid photocurrent recovery, making it promising for photodetector applications. This research offers a scalable method for two-dimensional gallium-group semiconductor synthesis, holding potential for diverse optoelectronic applications.