High uniformity and stability of graphene transparent conducting electrodes by dual-side doping
[Display omitted] •• Dual side doped graphene (Dual-N) shows a high uniformity and electrical conductivity.•• Dual-N exhibits an outstanding chemical and thermal stabilities (∼200 °C).•• Dual-N achieves a remarkable electrical/optical conductivity ratio (σDC/σop ∼ 62.38). Chemical doping is an effic...
Gespeichert in:
Veröffentlicht in: | Applied surface science 2022-12, Vol.605, p.154569, Article 154569 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | [Display omitted]
•• Dual side doped graphene (Dual-N) shows a high uniformity and electrical conductivity.•• Dual-N exhibits an outstanding chemical and thermal stabilities (∼200 °C).•• Dual-N achieves a remarkable electrical/optical conductivity ratio (σDC/σop ∼ 62.38).
Chemical doping is an efficient method to tailor the electrical properties of graphene transparent conductive electrodes. In general, chemically doped graphene by single-side exhibits a drawback of high conductivity but inferior uniformity and stability after exposure to chemical solvent or annealing process. Here, we report a highly uniform and stable graphene transparent conducting electrodes doped by dual-side with macro- and small molecular organic dopants such as Nafion on the top and benzimidazole (BI) at the bottom. The electrical properties, optical properties, and stability were compared depending on the top-side dopants. Dual-side doping showed a higher work function (>5 eV), and a uniform low sheet resistance (less than 200 Ω sq−1) compared to the single-side doping. The Dual-N exhibited a relatively higher figure of merit (FoM, σDC/σop ∼ 62.38), a smoother surface (Rrms ∼ 0.54 nm), and a superior thermal/chemical stability than the Dual-A, showing the potential possibility as alternative electrodes for next-generation flexible electronic devices. |
---|---|
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2022.154569 |