Enhancing the electronic properties of VLS-grown silicon nanowires by surface charge transfer

[Display omitted] •Enhancing the kinetics of the surface modification reaction can dramatically enhance/suppress the electronic properties.•Controlling the growth of oxidized Si NWs is important to achieve an Si/SiO2 interface with unique properties.•Understanding the surface reaction pathway, both theoretically and experimentally, is important in manipulating the surface properties. The need to develop new energy storage technology has led to deeper investigation into materials science to produce highly efficient batteries, primarily the lithium ion battery. The importance of electrodes in such devices has led to the reemergence of silicon nanowires (Si NWs) at the forefront of materials study—in this context, as an energy storage material (as electrodes). Redox potential and work function play the most important roles in charge transfer, the battery charging/discharging process. Thus, the NWs’ interfacial properties become important in achieving higher stability and efficiency. In this work, a deep study was conducted using equilibrium perturbation to change the surface electronic properties of Si NWs, which can be integrated into various technologies, while simultaneously achieving an interesting interface that is chemically passive and cheap to produce. By using an X-ray photoelectron spectroscope, a Kelvin probe, and contact angle measurement, combined with theoretical analysis, a full picture is achieved regarding the Si NWs’ interface, paving the way for this new technique to develop unique interfaces and to achieve a higher energy capacity and a longer lifetime.