Electron donor or acceptor behavior of a AuCl3 dopant manipulated by dip-pen nanolithography on a MoS2 thin-film transistor

[Display omitted] •AuCl3 doping in local area of the MoS2 was carried out by dip-pen nanolithography (DPN) with controlling the AuCl3 concentration.•Dependent on the AuCl3 concentration of the DPN process, AuCl3 dopant acts as electron acceptor or donor in the MoS2 thin-film transistor.•By utilizing this dopant concentration dependent type tunable local doping features through DPN, property of MoS2 application can be enhanced. Gold (III) chloride (AuCl3) is a well-known electron acceptor (p-type dopant). Here, the electron donor or acceptor behavior of a AuCl3 dopant on a molybdenum disulfide (MoS2) thin-film transistor (TFT) is demonstrated by line patterning a concentration-adjusted AuCl3 ink with dip-pen nanolithography (DPN). At a low ink concentration (clow) (