UV–annealing synthesis of sulfur-doped graphene for bisphenol A electrocatalytic degradation

[Display omitted] •A simple low-energy UV–annealing method is proposed to prepare sulfur-doped graphene.•UV–annealing method is more favorable for S doping at edge than traditional.•The BPA degradation mechanisms by materials at various pH values were explored. Introducing sulfur atoms into the graphene structure is effective in improving the properties of graphene materials. Considering that the traditional annealing process consumes high energy for high-content sulfur doping, a simple and low-energy UV–annealing method is proposed to prepare sulfur-doped graphene. As a result, the sulfur-doped graphene synthesized using this method had higher sulfur content, larger defect degree, and excellent electrocatalytic degradation performance than materials obtained from the annealing method. Under optimum conditions, the degradation efficiency of bisphenol A (BPA) could reach 100% within 40 min. Results showed that 1O2, O2·−, and active chlorine played major roles in the electrocatalytic degradation of BPA. S atoms were doped at the edge of graphene by using the UV–annealing method, whereas S atoms were doped at the skeleton of graphene by using the traditional annealing process. In addition, the possible degradation pathways of BPA were proposed. Therefore, this study provides a new strategy for the practical application of sulfur-doped graphene by using the UV–annealing method in the future.