Tuning the magnetism of L10-MnGa films by Pt doping

(a) HRTEM cross-sectional image along [0 0 1], FFT of MnGa+Pt layer and iFFT of (220) lattice plane, and (b) angular dependence of coercivity for the L10-MnGa films with Pt doping. The angle refers to that between the easy axis (film normal) and the applied field direction. [Display omitted] •We pre...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied surface science 2021-03, Vol.542, p.148585, Article 148585
Hauptverfasser: Zhang, Yumei, Zhang, Wen, Ning, Mengyao, Chen, Lingli, Li, Haibo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:(a) HRTEM cross-sectional image along [0 0 1], FFT of MnGa+Pt layer and iFFT of (220) lattice plane, and (b) angular dependence of coercivity for the L10-MnGa films with Pt doping. The angle refers to that between the easy axis (film normal) and the applied field direction. [Display omitted] •We present the first report of L10-MnGa film with Pt doping.•Pt doping affects preferred orientation and magnetic property of L10-MnGa film.•It’s a new ideas for the design and application of spintronics devices. L10-MnGa alloy films have attracted much attention for application of spin-transfer torque magnetic random access memories. Here we present the first report of the structure, magnetic and electrical transport properties of L10-MnGa films doped with Pt. It is found that L10-MnGa films have (001) orientation for 5% Pt-doped, and show (110) orientation for 10% and above Pt-doped. The out-of-plane coercivities increase, both the saturation magnetization and the magnetic anisotropy decrease monotonously with increasing Pt composition. By increasing Pt composition, L10-MnGa films change from ferromagnetic to paramagnetic property. The results of Hall effect measurement also confirm the change in magnetism. The experimental results are meaningful to open up new ideas for the design and application of spintronics devices.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2020.148585