GaAs milling with neon focused ion beam: Comparison with gallium focused ion beam milling and subsurface damage analysis

[Display omitted] •Formation of nanodots on milling surface of GaAs using gallium focused ion beam.•Milling rate on GaAs using Ga FIB is faster (5–7 times) than that using Ne FIB;•Porous surfaces and deep subsurface damage using Ne FIB at 25–30 keV on GaAs.•Smooth surfaces and shallow subsurface dam...

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Veröffentlicht in:	Applied surface science 2021-02, Vol.538, p.147922, Article 147922
Hauptverfasser:	Xia, Deying, Jiang, Ying-Bing, Notte, John, Runt, Doug
Format:	Artikel
Sprache:	eng
Schlagworte:	Focused ion beam GaAs Helium ion microscope Milling Nanopatterning Semiconductor
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	[Display omitted] •Formation of nanodots on milling surface of GaAs using gallium focused ion beam.•Milling rate on GaAs using Ga FIB is faster (5–7 times) than that using Ne FIB;•Porous surfaces and deep subsurface damage using Ne FIB at 25–30 keV on GaAs.•Smooth surfaces and shallow subsurface damage (
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2020.147922