Welded silver nanowire networks as high-performance transparent conductive electrodes: Welding techniques and device applications

•The techniques to weld Ag nanowire networks as transparent conductive electrodes are summarized.•The effects of various welding techniques on the sheet resistance of Ag nanowire networks have been discussed.•The advantages and limitations of each welding method have been compared.•The applications...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied materials today 2020-09, Vol.20, p.100634, Article 100634
Hauptverfasser: Ding, Yanan, Cui, Youchao, Liu, Xuhai, Liu, Guoxia, Shan, Fukai
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:•The techniques to weld Ag nanowire networks as transparent conductive electrodes are summarized.•The effects of various welding techniques on the sheet resistance of Ag nanowire networks have been discussed.•The advantages and limitations of each welding method have been compared.•The applications of welded Ag nanowire networks in advanced semiconductor electronics are discussed. Owing to the combined advantages of superior optical transmittance and excellent flexibility, low-cost silver nanowire networks (Ag-NNs) are considered as the promising candidates to replace brittle and cost-ineffective indium tin oxide (ITO) transparent electrodes. Moreover, Ag-NNs are also the best alternative to compensate low-yield and high-cost carbon nanotubes and graphene-based electrodes. However, the high contact resistance among Ag nanowires can result in deterioration of the electrical performance. A variety of strategies have been conducted to mitigate this problem, in an attempt to obtain high-quality Ag-NNs. This review summarizes recent advanced techniques to weld Ag-NNs, i.e., light-induced welding, heat-induced welding, capillary-force-induced welding and chemical welding. The sheet resistance of Ag-NNs can be significantly reduced without sacrificing the high transparency and superior flexibility of Ag-NNs, thereby exhibiting great potential to replace ITO for advanced wearable semiconductor applications. [Display omitted]
ISSN:2352-9407
2352-9415
DOI:10.1016/j.apmt.2020.100634