An ultra-low quiescent current power-on reset circuit with DDPG method
An ultra-low quiescent current power-on reset (POR) circuit with double-delay pulse generation (DDPG) method is presented in this paper. The circuit is designed for non-volatile memory (NVM) systems, aiming to ensure reliable initialization and enhance overall efficiency. To address the challenge of...
Gespeichert in:
Veröffentlicht in: | International journal of electronics and communications 2024-02, Vol.175, p.155097, Article 155097 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An ultra-low quiescent current power-on reset (POR) circuit with double-delay pulse generation (DDPG) method is presented in this paper. The circuit is designed for non-volatile memory (NVM) systems, aiming to ensure reliable initialization and enhance overall efficiency. To address the challenge of inaccurate trigger-point voltage caused by process, voltage, temperature (PVT) and ramp time variations, a novel pulse generation method is proposed. Additionally, the circuit further improves the reliability of pulse duration through the utilization of low-cost current reference generators. Implemented in standard 40 nm CMOS technology, the delay-based POR circuit consumes only 0.24 nA quiescent current and occupies a compact area of 25.6μm×102μm. The simulation results demonstrate a typical pulse duration time of 28μs, with a temperature coefficient (TC) of 101.4 ppm/°C. The high reliability and low overhead of this circuit make it suitable for NVM systems and other fast power-on applications.
•We introduce a DDPG method to avoid the effects of inaccurate trigger point voltage and supply ramp time.•We employ a low-cost current reference generator to realize reliable reset pulse duration.•Quiescent current is effectively reduced by turning off the circuit after generating an output pulse.•Delay-based architecture enables a compact circuit layout.•Our design is suitable for non-volatile memory systems and other fast power-on applications. |
---|---|
ISSN: | 1434-8411 1618-0399 |
DOI: | 10.1016/j.aeue.2023.155097 |