A 101 dB SNR fourth-order ΣΔ modulator for MEMS digital geophones

A fourth-order ΣΔ modulator (SDM) applied for micro-electro-mechanical systems (MEMS) digital geophones is presented in this paper. At the system stage, the proposed fourth-order SDM adopts a hybrid path technology including a feedforward path and a feedback path. At the design stage, a class AB operational transconductance amplifier with a gain bootstrap structure and chopper technique is employed in the first-stage integrator, which can achieve high DC gain, GBW, (Slew Rate) SR and reduce flicker noise, ensuring high (Signal-to-Noise Ratio) SNR for the proposed SDM. Meanwhile, other key modules are designed to meet basic requirements and achieve low power consumption at the same time. The proposed SDM was implemented in the SMIC 0.18 μm CMOS technology and its final area is 3.09 mm2. When the sampling frequency of 512KHz and signal bandwidth of 2KHz are adopted, the measured results show that the proposed fourth-order SDM can achieve SNR of 101 dB and ENOB of 16.4 bits with less than 5mW power consumption, which meet the requirements of high dynamic range and low power in MEMS digital geophones.