Design and analysis of ultra-thin dielectric film embedded nanoscale double-gate MOSFETs for boosting logic performance

This paper presents a systematic study on the performance of double gate (DG)-MOSFETs with an ultrathin embedded dielectric film (DF) at the center of the channel from the source to drain of the device. The numerical simulation results show that for k ≤ 12, the value of ION/IOFF of a 20-nm DF-DG-MOSFET increases with increasing value of DF thickness t reaching a maximum value of about 107 for dielectric constant k = 1, and t = 5 nm whereas, tends to decrease for k > 12. Also, the 20 nm DF-DG-MOSFET with (k = 1, t = 5 nm) shows the lowest subthreshold swing SS of 79 mV/decade and drain induced barrier lowering DIBL of 109 mV/V. However, the intrinsic delay of DF-DG-MOSFET increases with increasing t for k ≤ 12, whereas, decreases as both t and k increase for k > 12 reaching a value of 0.5 ps for (k = 80, t = 5 nm) compared to 0.8 ps for an identical conventional DG-MOSFET. This study, clearly, shows that the performance of DG-MOSFETs can be optimized by wise choice of t and k of an embedded DF and provides guidelines for the design of high performance and low power nanoscale logic devices.