Vat photopolymerization of large-aperture high performance SiC mirror through multiphase carbon infiltration modification

Vat photopolymerization technique (VPP) shows advantages in rapidly preparation of complex structure silicon carbide matrix composites (Si/SiC). However, compared with traditional preparation technology, the properties of Si/SiC prepared via VPP are insufficient due to the presence of residual Si and carbon. Herein, the reaction mechanism of Si and carbon were systematically studied. Multiphase carbon was introduced into porous SiC preform via carbon precursor infiltration pyrolysis (CPIP) and graphitization methods. The content of residual Si was significantly decreased after reactive melt infiltration (RMI), and the residual carbon was eliminated through partial graphitization of the carbon. The influence mechanism of the carbon content and crystallinity on the reaction process of Si and carbon was studied. It suggested that the diameter of capillary channel and crystallinity of carbon are the main factors affecting residual carbon content in the final body after RMI. The sample with multiphase carbon achieved the best performance after RMI. The residual Si content, bulk density, flexural strength and elastic modulus are 11.58%, 3.04 g/cm3, 280.09 MPa and 355.48 GPa. In addition, the lowest coefficient of linear expansion was 2.39×10−6 K−1. Finally, a large-aperture SiC mirror with a diameter of 500 mm was prepared. Therefore, this research lays a foundation for promoting the application of large-aperture Si/SiC prepared via 3D printing.