Silicon Vacancy Color Centers in 6H-SiC Fabricated by Femtosecond Laser Direct Writing

As a single photon source, silicon vacancy ( V Si ) centers in wide bandgap semiconductor silicon carbide (SiC) are expected to be used in quantum technology as spin qubits to participate in quantum sensing and quantum computing. Simultaneously, the new direct femtosecond (fs) laser writing technology has been successfully applied to preparing V Si s in SiC. In this study, 6H-SiC, which has been less studied, was used as the processed material. V Si center arrays were formed on the 6H-SiC surface using a 1030-nm-wavelength fs pulsed laser. The surface was characterized by white light microscopy, atomic force microscopy, and confocal photoluminescence (PL)/Raman spectrometry. The effect of fs laser energy, vector polarization, pulse number, and repetition rate on 6H-SiC V Si defect preparation was analyzed by measuring the V Si PL signal at 785-nm laser excitation. The results show that fs laser energy and pulse number greatly influence the preparation of the color center, which plays a key role in optimizing the yield of V Si s prepared by fs laser nanomachining. Highlights Color centers arrays of silicon vacancy were fabricated on 6H-SiC surface by fs laser. AFM and PL/ Raman spectrometer were used to characterize the morphology of the processing a rea and the forma tion of V Si . The influence of laser parameters i n the process of color center preparation by fs laser is studied, and the laser energy and las er pulse number are the main influencing factors.