Photoluminescent properties of nc-Si/SiOx nanosystems

In this work the nc-Si/SiO x nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiO x films were irradiated from 226 Ra isotope and were annealed at 1000 °C to grow nc-Si. By means of the ellipsometric technique we studied the effect of annealing duration and irradiation on the optical characteristics of nc-Si/SiO x films. It was found that irradiation of obtained films promotes visible photoluminescence witdh maximum near 740 nm. More effective photon emission is caused by the change of nc-Si passivation conditions. Obtained experimental and theoretical results show the important influence of the Si/SiO x interface on the light emitting properties of nc-Si.