Electrical properties of organic–inorganic semiconductor heterojunction

Conducting polyaniline (PANI) was prepared by chemical oxidation polymerization in the presence of excess hydrochloric acid. Zinc sulfide (ZnS) thin films were deposited on glass substrates at the pressure of 10 −5 mbar by thermal resistor evaporation technique. The solution of conducting PANI has b...

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Veröffentlicht in:Indian journal of physics 2012-06, Vol.86 (6), p.439-441
Hauptverfasser: Amrollahi Bioki, Hojjat, Borhani Zarandi, Mahmood
Format: Artikel
Sprache:eng
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Zusammenfassung:Conducting polyaniline (PANI) was prepared by chemical oxidation polymerization in the presence of excess hydrochloric acid. Zinc sulfide (ZnS) thin films were deposited on glass substrates at the pressure of 10 −5 mbar by thermal resistor evaporation technique. The solution of conducting PANI has been printed on pellet of ZnS using spin-coating technique. I – V characteristics of ZnS thin film and printed conducting PANI have been recorded at room temperature. The results indicated that I – V of conducting PANI shows non-ohmic behavior and I – V characteristic of conducting PANI printed ZnS, a PANI–ZnS heterojunction, shows the rectification effect and confirms that a diode can be fabricated by using simple technique.
ISSN:0973-1458
0974-9845
DOI:10.1007/s12648-012-0102-6