A Simulation Study of the Effect of Trap Charges and Temperature on Performance of Dual Metal Strip Double Gate TFET

A Simulation Study of the Effect of Trap Charges and Temperature on Performance of Dual Metal Strip Double Gate TFET

The TFET is a transistor with structure very similar to MOSFET but operates according on the Band-to-band tunneling (BTBT) principle plus, it’s better device for integrated circuit design as the SS

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Veröffentlicht in:SILICON 2024, Vol.16 (2), p.525-534
Hauptverfasser: Nikhil, Korra, Babu, K Murali Chandra, Talukdar, Jagritee, Goel, Ekta
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry
Chemistry and Materials Science
Environmental Chemistry
Inorganic Chemistry
Lasers
Materials Science
Optical Devices
Optics
Photonics
Polymer Sciences
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Beschreibung
Zusammenfassung:The TFET is a transistor with structure very similar to MOSFET but operates according on the Band-to-band tunneling (BTBT) principle plus, it’s better device for integrated circuit design as the SS
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-023-02633-x