An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer

An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.