Device Characteristics and Tight-Binding Based Modeling of a SnSe Field Effect Transistor

In this paper, we present a computational study on the electrical characteristics of a SnSe field-effect transistor. The nonequilibrium Green’s function formalism along with the atomistic tight-binding (TB) model is employed for carrier transport description. The TB model for SnSe is obtained by fitting the bandstructure to first-principle results that have not been reported yet. By using this model, the electrical characteristics of the device such as I ON / I OFF ratio and subthreshold swing are investigated. Also, the effects of the SnSe layer numbers on the device characteristics are investigated. The results indicate the current modulation of more than three orders of magnitude is achievable. The results are in good agreement with experimental data.