O-Doped Sb70Se30 Phase-Change Materials for High Thermal Stability and Fast Speed

O-Doped Sb70Se30 Phase-Change Materials for High Thermal Stability and Fast Speed

Oxygen doping was applied to improve the thermal stability of Sb 70 Se 30 materials. Compared with Sb 70 Se 30 film, the O-doped Sb 70 Se 30 films exhibited higher crystallization temperature (∼240°C), larger crystallization activation energy (4.99 eV) and better data retention (176.1°C for 10 years...

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Veröffentlicht in:Journal of electronic materials 2017-12, Vol.46 (12), p.6811-6816
Hauptverfasser: Sun, Yuemei, Hu, Yifeng, Zhu, Xiaoqin, Zou, Hua, Sui, Yongxing, Xue, Jianzhong, Yuan, Li, Zhang, Jianhao, Zheng, Long, Zhang, Dan, Song, Zhitang
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Instrumentation
Materials Science
Optical and Electronic Materials
Solid State Physics
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Zusammenfassung:Oxygen doping was applied to improve the thermal stability of Sb 70 Se 30 materials. Compared with Sb 70 Se 30 film, the O-doped Sb 70 Se 30 films exhibited higher crystallization temperature (∼240°C), larger crystallization activation energy (4.99 eV) and better data retention (176.1°C for 10 years). O-doping also broadened the band gap and refined the grain size. A faster phase switching speed was obtained for O-doped Sb 70 Se 30 materials. After O-doping, the phase change film had a smaller surface roughness (1.35 nm) than Sb 70 Se 30 .
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-017-5732-1