Effects of Ag-Doping on Thermoelectric Properties of Ca(2−x)AgxSi Alloys
Ca (2−x) Ag x Si (0 ≤ x ≤ 0.1) with 47.5% excess of Ca alloys were fabricated by melting in a tantalum tube and hot pressing technique. Phase structures of the samples were studied by means of x-ray diffraction. The electrical conductivity and Seebeck coefficient of Ca (2−x) Ag x Si alloys were st...
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Veröffentlicht in: | Journal of electronic materials 2017-05, Vol.46 (5), p.2986-2989 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Ca
(2−x)
Ag
x
Si (0 ≤
x
≤ 0.1) with 47.5% excess of Ca alloys were fabricated by melting in a tantalum tube and hot pressing technique. Phase structures of the samples were studied by means of x-ray diffraction. The electrical conductivity and Seebeck coefficient of Ca
(2−x)
Ag
x
Si alloys were studied in the temperature range of 300–873 K. The electrical conductivity of the Ag-doped samples increases within the whole test temperature range. All samples show
p
-type semiconductor behavior. The electrical conductivity decreases with increasing temperature from 300 K to 873 K, which is typically observed for a degenerate semiconductor. Compared with the undoped samples, Ag-doping (
x
= 0.04–0.1) results in decreases of Seebeck coefficient, especially Ca
(2−x)
Ag
x
Si with
x
= 0.1. The thermal conductivity of the doped samples gradually increases with increasing the Ag-doping content. The Ca
(2−x)
Ag
x
Si with
x
= 0.02 sample exhibits the lowest thermal conductivity within the whole test temperature range. The ZT values of Ca
(2−x)
Ag
x
Si with
x
= 0.02 sample have an enhancement in the temperature range of 300–873 K by contrast with those of the Ca
2
Si sample. The maximum ZT value is 0.16 at 837 k, which is observed for the Ca
(2−x)
Ag
x
Si with
x
= 0.04 sample. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-016-5088-y |