Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces

Growth of high-quality Bi 2 Se 3 films is crucial not only for study of topological insulators but also for manufacture of technologically important materials. We report a study of the heteroepitaxy of single-crystal Bi 2 Se 3 thin films grown on GaAs and InP substrates by use of molecular beam epit...

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Veröffentlicht in:	Journal of electronic materials 2014-04, Vol.43 (4), p.909-913
Hauptverfasser:	Chen, Zhiyi, Garcia, Thor Axtmann, De Jesus, Joel, Zhao, Lukas, Deng, Haiming, Secor, Jeff, Begliarbekov, Milan, Krusin-Elbaum, Lia, Tamargo, Maria C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical and Electronic Materials Physics Solid State Physics Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Zusammenfassung:	Growth of high-quality Bi 2 Se 3 films is crucial not only for study of topological insulators but also for manufacture of technologically important materials. We report a study of the heteroepitaxy of single-crystal Bi 2 Se 3 thin films grown on GaAs and InP substrates by use of molecular beam epitaxy. Surface topography, crystal structure, and electrical transport properties of these Bi 2 Se 3 epitaxial films are indicative of highly c -axis oriented films with atomically sharp interfaces.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-013-2890-7