Preparation and Transport Properties of Bi2O2Se Single Crystals

Bi 2 O 2 Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a  = 0.38866 nm and c  = 1.22001 nm. The samples were characterized by measuring the el...

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Veröffentlicht in:Journal of electronic materials 2012-09, Vol.41 (9), p.2317-2321
Hauptverfasser: Drasar, C., Ruleova, P., Benes, L., Lostak, P.
Format: Artikel
Sprache:eng
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Zusammenfassung:Bi 2 O 2 Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a  = 0.38866 nm and c  = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be m ef  ≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-012-2143-1