Preparation and Transport Properties of Bi2O2Se Single Crystals
Bi 2 O 2 Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the el...
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Veröffentlicht in: | Journal of electronic materials 2012-09, Vol.41 (9), p.2317-2321 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
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Zusammenfassung: | Bi
2
O
2
Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters
a
= 0.38866 nm and
c
= 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be
m
ef
≈ 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-012-2143-1 |