Preparation and Thermoelectric Characterization of SiC-B4C Composites

SiC-B 4 C composites with various values of SiC-to-B 4 C ratio and grain size were fabricated by pressureless sintering. This paper presents the results of current investigations of this composite material. This includes the parameters of manufacture (shrinkage, density, and open porosity), thermoelectric properties (electrical and thermal conductivity, and thermopower), and material characterization (x-ray diffraction, scanning electron microscopy, oxidation resistance, and thermal expansion). The results indicate high potential of this composite as an alternative material for thermoelectric applications at high temperatures. The Seebeck coefficient of the composite was higher than that of the single-component materials B 4 C and SiC and reached 400 μ V/K at 500°C.