Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies

Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established that the bipolar effect is significant in the p-type metal-oxide-semiconductor field-effect transistor （PMOS） in 90 nm technology and above. However, the consequences of the bipolar effect on P-hit single-event transients have still not completely been charac- terized in 65 nm technology. In this paper, characterization of the consequences of the bipolar effect on P-hit single-event tran- sients is performed by heavy ion experiments in both 65 nm twin-well and triple-well complementary metal-oxide-semicon- ductor （CMOS） technologies, Two inverter chains with clever layout structures are explored for the characterization. Ge （linear energy transfer （LET） = 37.4 MeV cm2/mg） and Ti （LET = 22.2 MeV cm2/mg） particles are also employed. The experimental results show that with Ge （Ti） exposure, the average pulse reduction is 49 ps （45 ps） in triple-well CMOS technology and 42 ps （32 ps） in twin-well CMOS technology when the bipolar effect is efficiently mitigated. This characterization will provide an important reference for radiation hardening integrated circuit design.