Synthesis and characterization of tin (IV) oxide thin films

Tin (IV) oxide, SnO 2 films have been successfully synthesized in argon gas using a magnetron sputtering device. The morphology, structure, optical, photoluminescence, and photoresponse features of the samples have been analyzed via field electron scanning electron microscope, X-ray diffractograms,...

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Veröffentlicht in:Optical and quantum electronics 2021-05, Vol.53 (5), Article 222
Hauptverfasser: Rahayi, M., Ehsani, M. H., Nkele, Agnes C., Shahidi, M. M., Ezema, Fabian I.
Format: Artikel
Sprache:eng
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Zusammenfassung:Tin (IV) oxide, SnO 2 films have been successfully synthesized in argon gas using a magnetron sputtering device. The morphology, structure, optical, photoluminescence, and photoresponse features of the samples have been analyzed via field electron scanning electron microscope, X-ray diffractograms, UV–Vis spectrometer, and spectro fluorophotometer. Compact nano grained morphologies with tetragonal structure and high absorbance were obtained. Increasing the annealing temperature led to a slight rise in the bandgap energies of the deposited samples. SnO 2 films exhibited good photoluminescence features with increasing photoresponse with time as the annealing temperature reduced. The films can be potentially applied to optical and solar cell devices. Graphic abstract
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-021-02896-x