Synthesis and characterization of tin (IV) oxide thin films
Tin (IV) oxide, SnO 2 films have been successfully synthesized in argon gas using a magnetron sputtering device. The morphology, structure, optical, photoluminescence, and photoresponse features of the samples have been analyzed via field electron scanning electron microscope, X-ray diffractograms,...
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Veröffentlicht in: | Optical and quantum electronics 2021-05, Vol.53 (5), Article 222 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Tin (IV) oxide, SnO
2
films have been successfully synthesized in argon gas using a magnetron sputtering device. The morphology, structure, optical, photoluminescence, and photoresponse features of the samples have been analyzed via field electron scanning electron microscope, X-ray diffractograms, UV–Vis spectrometer, and spectro fluorophotometer. Compact nano grained morphologies with tetragonal structure and high absorbance were obtained. Increasing the annealing temperature led to a slight rise in the bandgap energies of the deposited samples. SnO
2
films exhibited good photoluminescence features with increasing photoresponse with time as the annealing temperature reduced. The films can be potentially applied to optical and solar cell devices.
Graphic abstract |
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ISSN: | 0306-8919 1572-817X |
DOI: | 10.1007/s11082-021-02896-x |