Edge-emitting semiconductor laser subject to nonsinusoidal excitation from three-dimensional autonomous system: numerical and electronic models analysis

The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An electronic/analog model of the system is constructed in order to imitate the behavior of the material model. Period-doubling to chaos, is obtained when varying the amplitude of the reverse bias satura...

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Veröffentlicht in:	Optical and quantum electronics 2015-10, Vol.47 (10), p.3405-3417
Hauptverfasser:	Foutse, Momo, Woafo, Paul
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Lasers Optical Devices Optics Photonics Physics Physics and Astronomy
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An electronic/analog model of the system is constructed in order to imitate the behavior of the material model. Period-doubling to chaos, is obtained when varying the amplitude of the reverse bias saturation current. The experimental results show agreement with those obtained numerically.
ISSN:	0306-8919 1572-817X
DOI:	10.1007/s11082-015-0216-0