The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of g...

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Veröffentlicht in:	Optical and quantum electronics 2008-11, Vol.40 (14-15), p.1143-1148
Hauptverfasser:	Haxha, V., Garg, R., Migliorato, M. A., Drouzas, I. W., Ulloa, J. M., Koenraad, P. M., Steer, M. J., Liu, H. Y., Hopkinson, M., Mowbray, D. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Lasers Optical Devices Optics Photonics Physics Physics and Astronomy
Online-Zugang:	Volltext
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Zusammenfassung:	In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during epitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.
ISSN:	0306-8919 1572-817X
DOI:	10.1007/s11082-009-9276-3