Preparation of β-Bi2O3/g-C3N4 nanosheet p–n junction for enhanced photocatalytic ability under visible light illumination

β-Bi 2 O 3 /g-C 3 N 4 nanosheet (NS) p–n junction of g-C 3 N 4 NS-wrapped β-Bi 2 O 3 was fabricated via self-assembly process by electrostatic force. By the analyses of scanning electron microscopy images and Fourier transform infrared spectra, the g-C 3 N 4 NS has been wrapped on the spherical β-Bi 2 O 3 particles. Constructing p–n junction with g-C 3 N 4 NS can enhance the separation efficiency of photogenerated carriers and light absorption ability of β-Bi 2 O 3 particles obtained by the characterization of fluorescence spectra and diffuse reflectance spectra. The photocatalytic removal rate of RhB is largely enhanced by construction of β-Bi 2 O 3 /g-C 3 N 4 NS p–n junctions. The photocatalytic ability of β-Bi 2 O 3 /g-C 3 N 4 NS p–n junctions can be adjusted by tuning the loading amount of g-C 3 N 4 NS. The enhanced photocatalytic performance is firstly attributed to the p–n junction effect of efficient separation of photogenerated charge carriers. Furthermore, the increased light absorbance of the composites also contributes to the enhanced photocatalytic ability.